SSM3J09FU small package low on resistance : r on = 2.7 ? (max) (@v gs = ?1 0 v) : r on = 4.2 ? (max) (@v gs = ? 4 v) maximum ratings (ta 25c) characteristics symbol rating unit drain-source voltage v ds 30 v gate-source voltage v gss 20 v dc i d 200 drain current pulse i dp 400 ma drain power dissipation (ta 25 c) p d (note1) 150 mw channel temperature t ch 150 c storage temperature t stg 55~150 c note 1: mounted on fr4 board (25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3) figure 1. marking equivalent circuit (top view) handling precaution when handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is protected against electrostatic electricity. operators should wear anti-static clothing, and containers and other objects that come into direct contact with devices should be made of anti-static materials. unit: mm weight: 0.006 g (typ.) 0.6 mm 1.0 mm d k 1 2 3 1 2 3 figure 1: 25.4 mm 25.4 mm 1.6 t, cu pad: 0.6 mm 2 3 smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs 16 v, v ds 0 1 a drain-source breakdown voltage v (br) dss i d 1 ma, v gs 0 30 v drain cut-off current i dss v ds 30 v, v gs 0 1 a gate threshold voltage v th v ds 5 v, i d 0.1 ma 1.1 1.8 v forward transfer admittance y fs v ds 5 v, i d 100 ma (note2) 115 ms i d 100 ma, v gs 10 v (note2) 2.1 2.7 i d 100 ma, v gs 4 v (note2) 3.3 4.2 drain-source on resistance r ds (on) i d 100 ma, v gs 3.3 v (note2) 4.0 6.0 input capacitance c iss v ds 5 v, v gs 0, f 1 mhz 22 pf reverse transfer capacitance c rss v ds 5 v, v gs 0, f 1 mhz 5 pf output capacitance c oss v ds 5 v, v gs 0, f 1 mhz 14 pf turn-on time t on 85 ns switching time turn-off time t off v dd 5 v, i d 100 ma, v gs 0~ 4 v 85 ns note 2: pulse test switching time test circuit (a) test circuit (b) v in precaution v th can be expressed as voltage between gate and source when low operating current value is i d = 1 00 a for this product. for normal switching operation, v gs (on) requires higher voltage than v th and v gs (off) requires lower voltage than v th . (relationship can be established as follows: v gs (off) v th v gs (on) ) please take this into consideration for using the device. v gs recommended voltage of 4.0 v or higher to turn on this product. t on 90% 10% 0 v 4 v 90% 10% t off t r t f v ds ( on ) v dd (c) v out v dd 5 v d.u.
1% input: t r , t f
5 ns (z out 50 ) common source ta 25c v dd output input 0 4 v 10 s 50 r l SSM3J09FU smd type smd type smd type smd type smd type smd type smd type smd type smd type smd type product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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